Strain is often applied in semiconductor technology to improve the device performance in a field effect transistor (FET). However, it increases the off-state current as well. In this work, we investigated so-called silicon-on-insulator (SOI) fin-shaped field-effect transistors (FinFETs) and the effects of strain formed by the difference in coefficient of thermal expansion (CTE) of the used materials. Near ideal SOI FinFETs were realized in the clean room of MESA+ Institute for Nanotechnology. They served as a base for our new strained device structure: the PiezoFET. The PiezoFET is a novel device in which the channel strain can be controlled by a piezoelectric stressor to keep the off-current the same while increasing the on-current. In this device structure, PZT was used as a stressor and the effects of strain modulation due to the converse piezoelectric (piezo) effect in these devices were shown.The fabricated PiezoFET device is a good candidate for several future applications. Due to the possibility to obtain a lower and controllable SS compared to the base transistors, it can be an alternative FET design. The higher effective mobility makes it a reference point for improvement of the FinFET characteristics.
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